TK9A90E 900V 9A N-Channel Power MOSFET | TO-3P Package | Toshiba

TK9A90E – 900V, 9A N-Channel MOSFET | TO3P Package | Toshiba

The TK9A90E is a high-voltage N-channel MOSFET designed for efficient power switching applications, especially switching voltage regulators. Featuring enhancement-mode operation, this MOSFET offers low drain-source on-resistance and minimal leakage current, ensuring reliable performance in demanding industrial and power management circuits.

Key Features:

• 900V drain-source voltage rating

• 9A continuous drain current capability

• Low drain-source on-resistance for reduced conduction losses

• Very low leakage current for enhanced efficiency

• Enhancement mode with threshold voltage between 2.5V and 4.0V

• Compact TO3P (TO-220SIS) package

Applications:

• Switching voltage regulators

• Power management circuits

• Industrial power supplies