NCE6080K MOSFET by NCE Power | 10V 10A N-Channel Enhancement Mode Power MOSFET, TO-252 Package

NCE6080K MOSFET by NCE Power | 10V, 10A N-Channel Enhancement Mode Power MOSFET, TO-252 Package

The NCE6080K is an N-Channel Enhancement Mode Power MOSFET from NCE Power, designed with advanced trench technology to achieve low RDS(on) and low gate charge, ensuring high efficiency and fast switching performance. With a drain-source voltage rating of 10V and a continuous drain current of 10A, it is suitable for compact, high-performance power switching applications.

Key Features

• Type: N-Channel Enhancement Mode MOSFET

• VDS (Drain-Source Voltage): 10V

• ID (Continuous Drain Current): 10A

• Low RDS(on): Reduced conduction losses

• Low Gate Charge: Optimized for fast switching and efficiency

• Package: TO-252 (DPAK)

Applications

• DC-DC converters

• Load switches

• Battery-powered devices

• Consumer and industrial electronics

• Power management systems