NCE01P13 MOSFET by NCE Power | -13A, -10V P-Channel Power MOSFET, TO-252 Package

NCE01P13 by NCE Power | -13A, -10V P-Channel Power MOSFET, TO-252 Package

The NCE01P13 is a P-Channel Power MOSFET designed using advanced trench technology to deliver low RDS(on) and low gate charge, ensuring efficient switching performance. With a drain current capability of -13A and a drain-source voltage rating of -10V, it is well-suited for compact, high-performance power management applications. The device also features ESD protection for enhanced reliability.

Key Features

• Type: P-Channel Power MOSFET

• Drain-Source Voltage (VDS): -10V

• Continuous Drain Current (ID): -13A

• Low RDS(on): Ensures reduced conduction losses

• Low Gate Charge: Improves switching efficiency

• ESD Protected: Increases device robustness

• Package: TO-252 (surface-mount, compact power package)

Applications

• Power management in portable devices

• Battery protection and load switching

• DC-DC converters

• Low-voltage switching circuits

• Consumer and industrial electronics