The MX7716S is a high-efficiency 60V GaN integrated circuit from HCW-HENGCHENGWEI, engineered for compact and reliable power conversion systems up to 20W. Built on advanced Gallium Nitride (GaN) technology, this device delivers ultra-fast switching performance, reduced switching losses, and significantly improved efficiency compared to traditional silicon-based solutions. With a low 13mΩ RDS(on), the MX7716S minimizes conduction losses, enhancing thermal performance and ensuring stable long-term operation under continuous load conditions.
Designed for high-frequency operation, the MX7716S enables the use of smaller inductors and capacitors, supporting compact, high power-density designs. The 60V voltage rating provides a strong balance between efficiency and robustness, making it suitable for a wide range of low-voltage DC-DC conversion and power management applications.
The ESOP-8 package offers excellent thermal dissipation and flexible PCB layout integration, making it ideal for space-constrained designs requiring efficient heat management. Its optimized architecture supports stable performance and reduced system complexity in modern electronic devices.
The MX7716S is a reliable solution for engineers seeking efficiency, compact size, and strong thermal performance in GaN-based power systems.
Key Features:
- 60V GaN integrated circuit technology
- Low 13mΩ RDS(on) for reduced power loss
- Supports up to 20W power applications
- High-speed switching for improved efficiency
- ESOP-8 package with excellent thermal performance
- High power density for compact designs
- Stable and reliable operation under load
Applications:
- DC-DC converters and power modules
- Fast charging adapters (20W systems)
- Battery-powered devices
- Consumer electronics power supplies
- Industrial low-voltage systems
- Embedded and IoT power solutions
