The MX7716B is a high-performance 60V GaN integrated circuit from HCW-HENGCHENGWEI, engineered for efficient medium-power applications in the 25W–30W range. Utilizing advanced Gallium Nitride (GaN) technology, this device delivers ultra-fast switching speed, significantly reduced switching losses, and superior efficiency compared to traditional silicon-based power solutions. With an ultra-low 8mΩ RDS(on), the MX7716B minimizes conduction losses, improving overall energy efficiency, reducing heat generation, and enhancing long-term system reliability.
Designed for high-frequency operation, the MX7716B enables compact power system architectures by reducing the size of external components such as inductors and capacitors. This supports higher power density designs and helps achieve smaller, lighter, and more efficient electronic products.
The 60V voltage rating provides strong performance for DC-DC conversion, battery-powered systems, and high-efficiency power management applications. Its ESOP-8 package ensures excellent thermal dissipation and flexible PCB layout integration, making it suitable for compact and thermally demanding designs.
The MX7716B is an ideal solution for engineers seeking high efficiency, strong power handling, and compact GaN-based design integration.
Key Features:
- 60V GaN integrated circuit technology
- Ultra-low 8mΩ RDS(on) for maximum efficiency
- Supports 25W–30W power applications
- High-speed switching with reduced losses
- ESOP-8 package for excellent thermal performance
- High power density for compact systems
- Stable and reliable operation under load
Applications:
- DC-DC converters and power modules
- Fast charging adapters (25W–30W)
- Battery-powered devices
- Consumer electronics power supplies
- Industrial low-voltage systems
- Embedded and IoT power solutions
