The MX7716A is a high-efficiency 60V GaN integrated circuit from HCW-HENGCHENGWEI, designed for compact and high-performance power conversion applications up to 20W. Built on advanced Gallium Nitride (GaN) technology, this device delivers ultra-fast switching speeds, significantly reduced switching losses, and higher efficiency compared to conventional silicon-based solutions. With a low 13mΩ RDS(on), the MX7716A minimizes conduction losses, improving thermal performance and ensuring stable, reliable operation under continuous load conditions.
Engineered for modern high-frequency power systems, the MX7716A enables the use of smaller passive components such as inductors and capacitors, supporting compact, high power-density designs. The 60V voltage rating provides strong performance for low-voltage DC-DC conversion, battery-powered systems, and efficient power management solutions.
The ESOP-8 package offers excellent thermal dissipation and flexible PCB layout integration, making it suitable for space-constrained applications that require efficient heat management and stable performance. Its optimized design reduces system complexity while maintaining high efficiency and durability.
The MX7716A is an ideal choice for engineers seeking a balance of efficiency, compact size, and robust performance in GaN-based power systems.
Key Features:
- 60V GaN integrated circuit technology
- Low 13mΩ RDS(on) for reduced conduction losses
- Supports up to 20W power applications
- High-speed switching for improved efficiency
- ESOP-8 package with strong thermal performance
- High power density for compact designs
- Stable operation under varying load conditions
Applications:
- DC-DC converters and power modules
- Fast charging systems (20W adapters)
- Battery-powered devices
- Consumer electronics power supplies
- Industrial low-voltage power systems
- IoT and embedded applications
