The MX7710D is a high-efficiency 100V GaN integrated circuit from HCW-HENGCHENGWEI, designed for next-generation power conversion and high-frequency switching applications. Built using advanced Gallium Nitride (GaN) technology, this device offers ultra-fast switching performance, significantly reduced switching losses, and superior efficiency compared to traditional silicon-based MOSFET solutions. With an ultra-low 7mΩ RDS(on), the MX7710D minimizes conduction losses, resulting in improved thermal performance, higher energy efficiency, and enhanced system reliability.
Optimized for compact and high power density designs, the MX7710D supports high-frequency operation, allowing designers to reduce the size of external components such as inductors and capacitors. This leads to smaller, lighter, and more efficient power systems suitable for modern electronics.
The 100V voltage rating provides excellent headroom for DC-DC conversion, fast charging, and battery-powered applications, ensuring stable operation under varying load conditions. The ASOP6 package delivers superior space efficiency, strong thermal dissipation, and flexible PCB layout integration, making it ideal for compact and performance-driven designs.
The MX7710D is a reliable choice for engineers seeking high efficiency, compact size, and robust GaN-based power solutions.
Key Features:
- 100V GaN integrated circuit technology
- Ultra-low 7mΩ RDS(on) for maximum efficiency
- Fast switching with reduced switching losses
- High-frequency operation for compact designs
- ASOP6 package for space-saving integration
- Improved thermal performance and reliability
- High power density for modern applications
Applications:
- DC-DC converters and power modules
- Fast charging systems and adapters
- Battery management systems (BMS)
- Consumer electronics power supplies
- Industrial power systems
- Telecom and embedded power solutions
