The MX7709C is a high-performance 100V GaN integrated circuit from HCW-HENGCHENGWEI, engineered for high-efficiency power conversion in the 45W–65W range. Built using advanced Gallium Nitride (GaN) technology, this device delivers ultra-fast switching capability, significantly reduced switching losses, and superior energy efficiency compared to traditional silicon-based MOSFET solutions. With an ultra-low 6mΩ RDS(on), the MX7709C minimizes conduction losses, resulting in excellent thermal performance, higher power efficiency, and improved system reliability under heavy load conditions.
Designed for high-frequency operation, the MX7709C enables compact power architectures by reducing the size of external components such as inductors and capacitors. This allows for higher power density and more efficient, space-saving designs suitable for modern power electronics.
The 100V voltage rating provides strong headroom for DC-DC conversion, fast charging, and battery-powered systems, ensuring stable operation under wide input and load variations. The PDFN5×6 package offers excellent thermal dissipation performance and low parasitic characteristics, making it ideal for high-current and thermally demanding applications.
The MX7709C is an ideal solution for engineers seeking maximum efficiency, compact design, and robust GaN-based power performance.
Key Features:
- 100V GaN integrated circuit technology
- Ultra-low 6mΩ RDS(on) for maximum efficiency
- Supports 45W–65W high-power applications
- High-speed switching with reduced losses
- PDFN5×6 package for superior thermal performance
- High power density for compact system design
- Stable operation under heavy load conditions
Applications:
- High-power DC-DC converters
- Fast charging adapters (45W–65W)
- Battery-powered and energy storage systems
- Consumer electronics power supplies
- Industrial high-efficiency power modules
- Telecom and embedded power systems
