The MX7709B is a high-efficiency 100V GaN integrated circuit from HCW-HENGCHENGWEI, designed for medium-to-high power applications in the 30W–45W range. Built on advanced Gallium Nitride (GaN) technology, this device delivers ultra-fast switching performance, significantly reduced switching losses, and higher efficiency compared to conventional silicon-based power devices. With an ultra-low 10mΩ RDS(on), the MX7709B minimizes conduction losses, improving thermal behavior and ensuring stable, reliable operation under high-load conditions.
Engineered for high-frequency operation, the MX7709B enables compact power system designs by reducing the size of external passive components such as inductors and capacitors. This supports higher power density and more efficient, space-saving electronic solutions suitable for modern power systems.
The 100V voltage rating provides excellent performance headroom for DC-DC conversion, fast charging systems, and battery-powered applications, ensuring robust operation under varying input and load conditions. The ESOP-8 package offers strong thermal dissipation and flexible PCB layout integration, making it ideal for compact and thermally demanding designs.
The MX7709B is an excellent choice for engineers seeking high efficiency, strong power capability, and compact GaN-based power architecture.
Key Features:
- 100V GaN integrated circuit technology
- Ultra-low 10mΩ RDS(on) for maximum efficiency
- Supports 30W–45W power applications
- High-speed switching with reduced losses
- ESOP-8 package with excellent thermal performance
- High power density for compact designs
- Stable operation under heavy load conditions
Applications:
- DC-DC converters and power modules
- Fast charging systems (30W–45W)
- Battery-powered devices
- Consumer electronics power supplies
- Industrial power systems
- Telecom and embedded applications
