IRF7103TRPBF Dual N-Channel MOSFET Transistor 50V 3A | SO-8 Surface Mount Package

Fourth-Generation Power MOSFET – Ultra-Low On-Resistance, Fast Switching, Enhanced SO-8 Package

This fourth-generation Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Combined with fast switching speed and a ruggedized device design, it delivers exceptional efficiency and reliability across a wide range of power applications.

The SO-8 package has been optimized with a customized lead frame for improved thermal performance and dual-die capability, making it ideal for high-density power designs. These enhancements allow multiple devices to be used in parallel with significantly reduced board space requirements.

Designed for vapor phase, infrared, or wave soldering processes, the package supports power dissipation greater than 0.8 W in typical PCB-mounted applications.

Key Benefits:

• Ultra-low on-resistance for higher efficiency

• Fast switching speed for high-performance designs

• Rugged construction for improved reliability

• Enhanced SO-8 package with dual-die capability

• Compact footprint for reduced PCB space usage

• Supports multiple soldering techniques for manufacturing flexibility

With its combination of efficiency, thermal performance, and space-saving design, this MOSFET is well-suited for demanding industrial, consumer, and automotive power systems.