HXSM080N120PT | 1200V Silicon Carbide MOSFET | HOTCHIP

HXSM080N120PT SiC MOSFET delivers low switching loss, high temperature resistance, and automotive-grade reliability for power conversion and energy storage systems.

Key Features
1200V drain-source voltage
80m? RDS(on)
Automotive-grade reliability
High surge current capability
Fast switching performance
TO-247 package
Applications
Inverters
UPS systems
Energy storage systems
Automotive electronics