The HC7718B is a high-efficiency 60V GaN integrated circuit from HCW-HENGCHENGWEI, designed for advanced power conversion applications up to 30W. Built on cutting-edge Gallium Nitride (GaN) technology, this device delivers ultra-fast switching performance, significantly reduced switching losses, and higher efficiency compared to traditional silicon-based solutions. With an ultra-low 11mΩ RDS(on), the HC7718B minimizes conduction losses, ensuring excellent thermal performance, improved power efficiency, and reliable long-term operation under continuous load conditions.
Engineered for high-frequency operation, the HC7718B supports “搭配高频副边同步” (high-frequency secondary-side synchronous operation), enabling improved conversion efficiency, better output regulation, and enhanced system performance in modern SMPS designs. This makes it ideal for compact, high power-density applications requiring precise and efficient power control.
The 60V voltage rating provides strong suitability for DC-DC conversion, fast charging systems, and battery-powered devices, ensuring stable operation across a wide range of input conditions. The SOP-6 package offers a compact footprint with good thermal performance, making it suitable for space-constrained and thermally sensitive designs.
The HC7718B is an excellent solution for engineers seeking high efficiency, compact size, and synchronized high-frequency performance in GaN-based power systems.
Key Features:
- 60V GaN integrated circuit technology
- Ultra-low 11mΩ RDS(on) for high efficiency
- Supports up to 30W power applications
- High-speed switching with reduced losses
- SOP-6 compact package design
- Supports high-frequency secondary-side synchronous operation
- Stable thermal performance and reliability
Applications:
- DC-DC converters (30W systems)
- Fast charging adapters
- Battery-powered devices
- Consumer electronics power supplies
- IoT and smart devices
- Industrial low-voltage power systems
