The HC7717B is a high-efficiency 45V GaN integrated circuit from HCW-HENGCHENGWEI, designed for advanced low-voltage power conversion applications in the 20W–25W range. Utilizing cutting-edge Gallium Nitride (GaN) technology, this device delivers ultra-fast switching performance, significantly reduced switching losses, and higher efficiency compared to traditional silicon-based solutions. With a low 11mΩ RDS(on), the HC7717B minimizes conduction losses, ensuring improved thermal performance, higher power efficiency, and stable long-term operation.
Engineered for high-frequency operation, the HC7717B supports “搭配高频副边同步” (high-frequency secondary-side synchronous operation), enabling improved conversion efficiency and enhanced output regulation in modern power supply architectures. This makes it highly suitable for compact and energy-efficient designs requiring precise power control.
The 45V voltage rating provides reliable performance for DC-DC conversion and battery-powered systems, while the SOP-6 package offers a small footprint and flexible PCB integration for space-constrained applications. Its optimized thermal characteristics ensure stable operation under continuous load conditions and high switching frequencies.
The HC7717B is an excellent choice for engineers seeking a balance of efficiency, compact size, and synchronized high-frequency performance in GaN-based power systems.
Key Features:
- 45V GaN integrated circuit technology
- Ultra-low 11mΩ RDS(on) for higher efficiency
- Supports 20W–25W power applications
- High-speed switching for reduced losses
- SOP-6 compact package design
- Supports high-frequency secondary-side synchronous operation
- Improved thermal stability and reliability
Applications:
- DC-DC converters and power modules
- Fast charging adapters (20W–25W)
- Battery-powered devices
- Consumer electronics power supplies
- IoT and embedded systems
- Low-voltage industrial power solutions
