F7N80 | 800V 7A N-Channel Power MOSFET | TO-220 Package
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F7N80 | 800V 7A N-Channel Power MOSFET | TO-220 Package
The F7N80 is an 800V, 7A N-channel enhanced VDMOSFET designed using advanced self-aligned planar technology. This process significantly reduces conduction losses, improves switching performance, and enhances avalanche energy capability, ensuring high reliability in demanding power applications.
Compliant with RoHS standards, the TO-220F insulated package offers a 2000V RMS isolation voltage between all terminals and the external heatsink, making it suitable for high-voltage and high-efficiency power designs.
Key Features
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⚡ High Voltage Capability – 800V drain-to-source rating.
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🔋 Robust Current Handling – Continuous drain current up to 7A.
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🚀 Fast Switching – Ideal for high-speed and high-efficiency applications.
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🛡 Enhanced ESD Protection – Improved capability for system reliability.
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📉 Low On-Resistance – R<sub>DS(on)</sub> ≤ 1.8Ω.
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🔄 Low Gate Charge – Typical Q<sub>g</sub>: 33.9nC.
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📡 Low Reverse Transfer Capacitance – Typical C<sub>rss</sub>: 11.2pF.
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✅ Reliability Tested – 100% single pulse avalanche energy and ΔV<sub>DS</sub> test.
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🔌 Insulated Package (TO-220F) – Provides 2000V RMS isolation.
Applications
The F7N80 Power MOSFET is suitable for a wide range of power switching applications requiring system miniaturization, higher efficiency, and thermal reliability:
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⚡ Switch-mode power supplies (SMPS)
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💡 Electronic ballasts for lighting
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🔋 AC adapters & chargers
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⚙️ General-purpose power switching circuits
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🏭 Industrial control systems
✅ The F7N80 MOSFET delivers a balance of high voltage capability, fast switching, and low conduction losses, making it an ideal choice for modern power electronics applications.
