DHSJ7N65 TO-220 N-Channel 650V HV Super Junction MOSFET WXDH

These High Voltage Super Junction (SJ) N-Channel MOSFETs are engineered using advanced charge-balanced super junction technology to deliver exceptional efficiency, low conduction losses, and superior switching performance in high-voltage power applications. Designed for voltage ratings ranging from 500V to 800V, this series is optimized for use in demanding power conversion environments where high efficiency, fast switching, and thermal reliability are critical.

The SJ MOSFET architecture significantly reduces RDS(ON) while maintaining high breakdown voltage capability, enabling improved power density and reduced heat generation. These devices feature low gate charge (Qg) and low capacitance (Ciss/Crss), which contribute to faster switching speeds and reduced switching losses, making them highly suitable for high-frequency applications.

With robust avalanche energy capability (EAS) and wide safe operating area (SOA), these MOSFETs ensure reliable performance under dynamic load conditions and transient events. The availability of multiple package options such as TO-220, TO-220F, TO-247, TO-252, TO-263, TO-251, PDFN, and advanced surface-mount packages allows flexible design integration across various power systems.

These MOSFETs are ideal for applications including:

• Switching Power Supplies (SMPS)

• AC-DC and DC-DC Converters

• Power Factor Correction (PFC) Circuits

• Solar Inverters and Renewable Energy Systems

• Motor Drives and Industrial Power Control

• UPS Systems and Battery Charging Solutions