DH1K1N10T 100V 4A N-Channel Power MOSFET – SOT-23 | WXDH

The 100V N-Channel Trench MOSFET series from WXDH is designed to deliver reliable and efficient performance across a wide range of power management applications. Built using advanced trench technology, these MOSFETs offer optimized RDS(on), stable switching behavior, and improved efficiency, making them suitable for both medium- and low-power designs.

This series spans a broad current range from compact low-current devices for space-constrained applications to higher current variants for power-intensive systems. With diverse package options including TO-220, TO-263, TO-252 (DPAK), TO-251, DFN5×6, SOT-223, and SOT-23, the series provides excellent flexibility for PCB layout, thermal management, and system integration.

Engineered for consistent performance, these MOSFETs ensure low conduction losses and reliable switching characteristics, making them ideal for switching regulators, power supplies, load switching, and general-purpose power control. Their robust construction and thermal efficiency enable stable operation under continuous load and varying environmental conditions.

Key Specifications (Typical Range)

• Brand: WXDH

• Polarity: N-Channel

• Drain-Source Voltage (BVDSS): 100V

• Drain Current (ID): 4A to 137A

• Gate-Source Voltage (BVGSS): ±20V

• RDS(on): Optimized for efficiency

• Gate Threshold Voltage (Vth): ~1.4V – 3V

• Technology: Trench MOSFET

• Package Options: TO-220, TO-263, TO-252, TO-251, DFN5×6, SOT-223, SOT-23

Applications

• Switching power supplies (SMPS)

• DC-DC converters

• Load switching circuits

• Battery-powered devices

• Industrial control systems

• Consumer electronics

Features

• Advanced trench technology for efficient performance

• Low RDS(on) to reduce conduction losses

• Wide current range for multiple applications

• Stable and reliable switching behavior

• Multiple package options for flexible design

• Good thermal performance

• Suitable for compact and high-density PCB designs