DCGT20D65G4 SiC Schottky Diode 650V 20A TO-220-2 | G4 Single

The DCGT20D65G4 is a 650V, 20A Silicon Carbide Schottky diode designed for high-current power conversion systems. Built on advanced G4 SiC technology, it provides ultra-fast switching, zero reverse recovery current, and reduced power losses. The TO-220-2 through-hole package ensures robust thermal management, making it suitable for demanding industrial and renewable energy applications.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 20 A
Forward Voltage (VF): 1.27 V
Surge Current (IFSM): 160 A
Total Charge (Qc): 41 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-220-2

Applications

High-power PFC circuits
Industrial power converters
Solar inverters
Motor drive systems
EV auxiliary power units
High-current rectification

Features

Zero reverse recovery current
Low conduction losses
High surge capability (160A)
High thermal stability
Robust through-hole package
Optimized for high-current operation