DCGT20D120G4 SiC Schottky Diode 1200V 20A TO-220-2 | G4 Single

The DCGT20D120G4 is a 1200V, 20A Silicon Carbide Schottky barrier diode engineered for high-current and high-voltage power conversion systems. Based on advanced G4 SiC technology, it provides ultra-fast switching, zero reverse recovery current, and reduced conduction losses. The TO-220-2 through-hole package ensures robust thermal performance for industrial, renewable energy, and high-power applications.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 20 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 180 A
Total Charge (Qc): 80 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-220-2

Applications

High-voltage PFC systems
Industrial power converters
Solar inverter rectification
Motor drives
EV auxiliary systems
High-power SMPS

Features

Zero reverse recovery current
Low switching losses
High surge capability (180A)
High blocking voltage (1200V)
Robust through-hole package
High efficiency in high-frequency applications