DCGT15D120G4 SiC Schottky Diode 1200V 15A TO-220-2 | G4 Single

The DCGT15D120G4 is a 1200V, 15A Silicon Carbide Schottky barrier diode engineered for high-voltage and high-current power conversion systems. Utilizing advanced G4 SiC technology, it delivers zero reverse recovery current, low power losses, and stable operation at junction temperatures up to 175°C. The TO-220-2 through-hole package provides strong thermal handling for industrial and renewable energy applications.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 15 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 135 A
Total Charge (Qc): 62 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-220-2

Applications

High-voltage PFC systems
Industrial power converters
Solar inverters
Motor drives
EV auxiliary systems
High-power DC output stages

Features

Zero reverse recovery current
Low switching losses
High surge capability (135A)
High voltage blocking (1200V)
Robust through-hole package
High efficiency in high-frequency designs