DCGT10D65G4 SiC Schottky Diode 650V 10A TO-220-2 | G4 Single
WXDH
The DCGT10D65G4 is a 650V, 10A SiC Schottky diode optimized for demanding power electronics systems requiring high efficiency and reliability. Utilizing advanced G4 silicon carbide technology, it provides ultra-fast switching performance with negligible reverse recovery losses and reduced conduction losses. The TO-220-2 through-hole package ensures strong thermal handling and mechanical robustness.
Key Specifications
Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 10 A
Forward Voltage (VF): 1.27 V
Surge Current (IFSM): 86 A
Total Charge (Qc): 25 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-220-2
Applications
PFC boost converters
High-frequency switch-mode power supplies
Solar inverters
Industrial power converters
Motor drives
UPS systems
Features
Zero reverse recovery losses
Low switching and conduction losses
High surge current capability
Excellent thermal performance
Robust through-hole package
High efficiency in high-frequency applications
