DCGT10D120G4 SiC Schottky Diode 1200V 10A TO-220-2 | G4 Single

The DCGT10D120G4 is a 1200V, 10A Silicon Carbide Schottky diode engineered for high-voltage and high-frequency power conversion systems. Based on advanced G4 SiC technology, it delivers ultra-fast switching performance with negligible reverse recovery losses and reduced conduction losses. The TO-220-2 through-hole package provides reliable thermal performance for industrial and renewable energy designs.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 10 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 90 A
Total Charge (Qc): 41 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-220-2

Applications

High-voltage PFC stages
Industrial power converters
Solar inverters
Motor drives
UPS systems
High-voltage DC-DC converters

Features

Zero reverse recovery losses
Low switching losses
High surge current capability
High voltage blocking (1200V)
Robust through-hole package
Reliable operation at elevated temperatures