DCGT08D65G4 SiC Schottky Diode 650V 8A TO-220-2 | G4 Single
WXDH
The DCGT08D65G4 is a 650V, 8A SiC Schottky barrier diode engineered for high-performance rectification in demanding power electronics applications. Utilizing G4 silicon carbide technology, it delivers ultra-fast switching, negligible reverse recovery losses, and reduced conduction losses. The TO-220-2 through-hole package provides strong thermal performance and mechanical robustness for industrial and renewable energy designs.
Key Specifications
Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 8 A
Forward Voltage (VF): 1.27 V
Surge Current (IFSM): 72 A
Total Charge (Qc): 21 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-220-2
Applications
PFC boost converters
High-frequency switch-mode power supplies
Solar inverters
Motor drives
Industrial power converters
UPS systems
Features
Zero reverse recovery current
Low switching losses
High surge current rating
High thermal stability
Robust through-hole package
Improved overall system efficiency
