DCGT06D65G4 SiC Schottky Diode 650V 6A TO-220-2 | G4 Single

The DCGT06D65G4 is a 650V, 6A SiC Schottky diode engineered for high-performance power electronics systems. Utilizing advanced G4 silicon carbide technology, it offers negligible reverse recovery loss, fast switching capability, and reduced conduction losses. The TO-220-2 through-hole package provides robust thermal handling, making it suitable for industrial and renewable energy applications.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 6 A
Forward Voltage (VF): 1.27 V
Surge Current (IFSM): 52 A
Total Charge (Qc): 17 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-220-2

Applications

PFC boost circuits
High-frequency SMPS
Industrial power supplies
Solar energy systems
Battery chargers
UPS systems

Features

Zero reverse recovery losses
Low switching and conduction losses
High surge current rating
High thermal stability
Reliable through-hole package
High efficiency in high-frequency designs