DCGT05D120G4 SiC Schottky Diode 1200V 5A TO-220-2 | G4 Single
WXDH
The DCGT05D120G4 is a 1200V, 5A Silicon Carbide (SiC) Schottky diode designed for high-voltage and high-efficiency power conversion systems. Based on advanced G4 SiC technology, it delivers zero reverse recovery current, low switching losses, and reliable operation up to 175°C junction temperature. The TO-220-2 through-hole package offers strong thermal handling for industrial and renewable energy applications.
Key Specifications
Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 5 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 50 A
Total Charge (Qc): 25 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-220-2
Applications
High-voltage PFC circuits
Industrial power supplies
Solar inverters
DC-DC converters
Battery charging systems
UPS systems
Features
Zero reverse recovery losses
Low switching losses
High blocking voltage (1200V)
High surge current capability
High thermal stability up to 175°C
Optimized for high-voltage applications
