DCGT04D65G4 SiC Schottky Diode 650V 4A TO-220-2 | G4 High-Efficiency Rectifier

The DCGT04D65G4 is a 650 V Silicon Carbide (SiC) Schottky barrier diode built on advanced G4 technology, designed for high-efficiency power conversion applications. It features low forward voltage drop, zero reverse recovery charge, and high surge current capability, making it ideal for high-frequency and high-temperature designs.

Key Specifications

• Technology: SiC Schottky Diode (G4 platform)

• Reverse Breakdown Voltage (VBR): 650 V

• Average Forward Current (IF): 4 A

• Forward Voltage (VF): 1.28 V

• Surge Current (IFSM): 32 A

• Total Capacitive Charge (Qc): 11.5 nC

• Maximum Junction Temperature (Tj): 175 °C

• Configuration: Single

• Package: TO-220-2

Typical Applications

• Power factor correction (PFC)

• High-frequency SMPS

• DC-DC converters

• Solar inverters

• Industrial power supplies