DCFT10D65G4 SiC Schottky Diode 650V 10A TO-220F-2 | G4 Single

The DCFT10D65G4 is a 650V, 10A Silicon Carbide Schottky barrier diode designed for high-efficiency rectification in industrial and renewable energy systems. Based on G4 SiC technology, it offers negligible reverse recovery charge, fast switching behavior, and low conduction losses. The fully insulated TO-220F-2 package simplifies mounting and enhances electrical isolation in high-voltage designs.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 10 A
Forward Voltage (VF): 1.27 V
Surge Current (IFSM): 80 A
Total Charge (Qc): 25 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-220F-2 (Fully Insulated)

Applications

Switch-mode power supplies
Power factor correction stages
Solar micro-inverters
EV auxiliary power systems
Battery charging systems
Industrial rectification

Features

Fully insulated package
Zero reverse recovery current
Low forward voltage drop
High surge capability
High-temperature operation to 175°C
Improved system efficiency