DCFT08D65G4 SiC Schottky Diode 650V 8A TO-220F-2 | G4 Single

The DCFT08D65G4 is a 650V, 8A Silicon Carbide Schottky diode optimized for high-efficiency power conversion and rectification. Based on advanced G4 SiC technology, it provides negligible reverse recovery charge, fast switching performance, and reduced power loss. The fully insulated TO-220F-2 package enhances safety and simplifies thermal management in high-voltage designs.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 8 A
Forward Voltage (VF): 1.27 V
Surge Current (IFSM): 72 A
Total Charge (Qc): 21 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-220F-2 (Fully Insulated)

Applications

Switch-mode power supplies
Power factor correction stages
Solar micro-inverters
EV auxiliary systems
Industrial rectification
Battery charging systems

Features

Fully insulated package for simplified mounting
Zero reverse recovery losses
Low conduction loss
High surge capability
High-temperature operation to 175°C
High efficiency at high switching frequencies