DCFT06D65G4 SiC Schottky Diode 650V 6A TO-220F-2 | G4 Single

The DCFT06D65G4 is a 650V, 6A SiC Schottky barrier diode optimized for high-efficiency rectification in power conversion systems. Based on G4 SiC technology, it delivers ultra-fast switching performance with virtually zero reverse recovery charge. The fully insulated TO-220F-2 package simplifies thermal design and improves safety in high-voltage applications.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 6 A
Forward Voltage (VF): 1.27 V
Surge Current (IFSM): 50 A
Total Charge (Qc): 17 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-220F-2 (Fully Insulated)

Applications

Switch-mode power supplies
PFC stages
Industrial converters
Solar micro-inverters
EV auxiliary power systems
Telecom power supplies

Features

Fully insulated package for simplified mounting
Zero reverse recovery current
Low forward voltage drop
High surge capability
High-temperature operation to 175°C
Enhanced power conversion efficiency