DCFT04D65G4 SiC Schottky Diode 650V 4A TO-220F-2 | G4 High-Efficiency Rectifier

The DCFT04D65G4 is a 650 V SiC Schottky diode utilizing G4 technology, optimized for high-efficiency and high-temperature power systems. Its low forward voltage and zero reverse recovery characteristics significantly reduce switching losses in high-frequency applications.

Key Specifications

• Technology: SiC Schottky Diode (G4 platform)

• Reverse Breakdown Voltage (VBR): 650 V

• Average Forward Current (IF): 4 A

• Forward Voltage (VF): 1.28 V

• Surge Current (IFSM): 32 A

• Total Capacitive Charge (Qc): 11.5 nC

• Maximum Junction Temperature (Tj): 175 °C

• Configuration: Single

• Package: TO-220F-2 (Fully Insulated)

Typical Applications

• Power supplies and adapters

• PFC boost stages

• Renewable energy inverters

• Industrial SMPS

• High-efficiency rectification