DCEV140M120G2 SiC MOSFET 1200V 140mΩ 17A TO-263-7 | G2 High-Efficiency Power Device

The DCEV140M120G2 is a 1200 V SiC MOSFET utilizing advanced G2 technology, optimized for compact, high-voltage power designs. Its low conduction losses and stable switching characteristics enable improved system efficiency and reliability.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 1200 V

• On-Resistance (Rds(on)): 140 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 17 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 42.5 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-263-7

Typical Applications

• High-voltage DC-DC converters

• Industrial power supplies

• Solar and energy storage inverters

• EV charging systems

• Power factor correction (PFC) stages