DCEV075M120G2 SiC MOSFET 1200V 75mΩ 33A TO-263-7 | G2 High-Efficiency Power Device

The DCEV075M120G2 is a 1200 V Silicon Carbide (SiC) MOSFET based on advanced G2 technology, designed for compact, high-voltage power conversion. With low conduction losses and strong thermal capability, it enables high efficiency in high-power density applications.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 1200 V

• On-Resistance (Rds(on)): 75 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 33 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 68 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-263-7

Typical Applications

• Industrial power supplies

• Renewable energy inverters

• High-voltage DC-DC converters

• EV charging systems

• Power factor correction (PFC)