DCEV040M65G2 SiC MOSFET 650V 40mΩ 52A TO-263-7 | WXDH-Jiangsu Donghai G2 High-Efficiency Power Device

The DCEV040M65G2 is a 650 V SiC MOSFET built on G2 technology, optimized for compact, high-efficiency power designs. With low Rds(on) and high current capability, it enables reduced losses and improved thermal performance in high-density applications.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 650 V

• On-Resistance (Rds(on)): 40 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 52 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 82 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-263-7

Typical Applications

• EV power systems

• DC-DC converters

• Renewable energy inverters

• High-efficiency SMPS

• Industrial power supplies