DCEV040M120A2 SiC MOSFET 1200V 40mΩ 68A TO-263-7 | G2 High-Efficiency Power Device

The DCEV040M120A2 is a 1200 V SiC MOSFET optimized for compact, high-power density designs. With low 40 mΩ on-resistance and high current capability (68 A), it delivers excellent efficiency and thermal stability for advanced power conversion systems.

Key Specifications

• Technology: SiC MOSFET (G2/A2 platform)

• Drain-Source Voltage (VDS): 1200 V

• On-Resistance (Rds(on)): 40 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 68 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 120 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-263-7

Typical Applications

• EV power systems

• Renewable energy inverters

• Industrial power supplies

• High-voltage DC-DC converters

• Power factor correction (PFC) stages