DCEV030M65G2 SiC MOSFET 650V 30mΩ 55A TO-263-7 | WXDH-Jiangsu Donghai G2 High-Efficiency Power Device

The DCEV030M65G2 is a 650 V Silicon Carbide (SiC) MOSFET based on advanced G2 technology, designed for high-efficiency and high power density applications. With low 30 mΩ on-resistance and fast switching capability, it enables reduced losses and improved thermal performance in compact designs.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 650 V

• On-Resistance (Rds(on)): 30 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 55 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 110 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-263-7

Typical Applications

• EV onboard chargers (OBC)

• High-efficiency DC-DC converters

• Renewable energy inverters

• Industrial power supplies

• Energy storage systems