DCEV030M120G2 SiC MOSFET 1200V 30mΩ 65A TO-263-7 | G2 High-Efficiency Power Device

The DCEV030M120G2 is a 1200 V Silicon Carbide (SiC) MOSFET built on advanced G2 technology, optimized for compact and high-efficiency power designs. With low 30 mΩ on-resistance and strong current capability, it enables reduced losses and improved thermal reliability in demanding high-voltage applications.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 1200 V

• On-Resistance (Rds(on)): 30 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 65 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 102 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-263-7

Typical Applications

• EV onboard chargers and traction systems

• Industrial motor drives

• Solar and energy storage inverters

• High-voltage DC-DC converters

• Power factor correction (PFC)