DCEV020M65G2 SiC MOSFET 650V 20mΩ 72A TO-263-7 | WXDH-Jiangsu Donghai G2 High-Efficiency Power Device

The DCEV020M65G2 is a 650 V SiC MOSFET based on G2 technology, optimized for compact, high-power density applications. Its low 20 mΩ on-resistance and high current rating enable reduced losses and improved system efficiency.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 650 V

• On-Resistance (Rds(on)): 20 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 72 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 187 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-263-7

Typical Applications

• EV onboard chargers and power systems

• High-efficiency DC-DC converters

• Renewable energy inverters

• Industrial power supplies

• Energy storage systems