DCE20D120G4 SiC Schottky Diode 1200V 20A TO-263-2 | G4 Single

The DCE20D120G4 is a 1200V, 20A Silicon Carbide Schottky diode optimized for high-density and surface-mount power applications. Based on G4 SiC technology, it delivers zero reverse recovery current, fast switching characteristics, and reduced power dissipation. The TO-263-2 (D2PAK) package enhances thermal performance, making it ideal for industrial and renewable energy systems requiring compact and efficient designs.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 20 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 180 A
Total Charge (Qc): 80 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-263-2 (D2PAK)

Applications

Industrial AC-DC converters
High-voltage DC-DC converters
Solar inverters
Battery charging systems
UPS systems
Telecom power supplies

Features

Zero reverse recovery current
Low conduction losses
High surge capability (180A)
Surface-mount high-power package
High blocking voltage (1200V)
Reliable high-temperature operation