DCE15D120G4 SiC Schottky Diode 1200V 15A TO-263-2 | G4 Single

The DCE15D120G4 is a 1200V, 15A Silicon Carbide Schottky diode optimized for high-density and surface-mount power applications. Utilizing G4 SiC technology, it delivers negligible reverse recovery losses, fast switching performance, and low power dissipation. The TO-263-2 (D2PAK) package enhances heat dissipation, making it suitable for industrial and renewable energy systems requiring compact design and high reliability.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 15 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 135 A
Total Charge (Qc): 62 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-263-2 (D2PAK)

Applications

Industrial AC-DC converters
High-voltage DC-DC converters
Solar inverters
Battery charging systems
UPS systems
Telecom power supplies

Features

Zero reverse recovery losses
Low conduction losses
High surge current capability
Surface-mount high-power package
High voltage blocking (1200V)
Reliable high-temperature operation