DCE10D65G4 SiC Schottky Diode 650V 10A TO-263-2 | G4 Single
WXDH
The DCE10D65G4 is a 650V, 10A SiC Schottky diode optimized for high-power density applications requiring efficient thermal performance. Utilizing G4 silicon carbide technology, it offers negligible reverse recovery losses, fast switching characteristics, and low conduction losses. The TO-263-2 (D2PAK) package provides enhanced heat dissipation for higher current industrial applications.
Key Specifications
Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 10 A
Forward Voltage (VF): 1.27 V
Surge Current (IFSM): 86 A
Total Charge (Qc): 25 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-263-2 (D2PAK)
Applications
Industrial power supplies
High-frequency SMPS
Solar inverters
Motor drives
Battery chargers
UPS systems
Features
Zero reverse recovery losses
Low switching and conduction losses
High surge current rating
Improved thermal performance
Surface-mount high-power package
High reliability at elevated temperatures
