DCE10D120G4 SiC Schottky Diode 1200V 10A TO-263-2 | G4 Single

The DCE10D120G4 is a 1200V, 10A Silicon Carbide Schottky diode optimized for high-power density applications requiring improved thermal performance. Based on G4 SiC technology, it provides ultra-fast switching, negligible reverse recovery losses, and reduced power dissipation. The TO-263-2 (D2PAK) package enhances heat dissipation for demanding industrial and renewable energy designs.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 10 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 90 A
Total Charge (Qc): 41 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-263-2 (D2PAK)

Applications

Industrial power supplies
High-voltage DC-DC converters
Solar inverter rectification
Motor drive systems
UPS systems
Battery chargers

Features

Zero reverse recovery losses
Low conduction and switching losses
High surge current capability
Improved thermal performance
Surface-mount high-power package
Reliable operation at elevated temperatures