DCD10D65G4 SiC Schottky Diode 650V 10A TO-252 | G4 Single

The DCD10D65G4 is a 650V, 10A Silicon Carbide (SiC) Schottky barrier diode designed for high-efficiency and high-frequency power conversion systems. Based on advanced G4 SiC technology, it provides zero reverse recovery current, low forward voltage drop, and excellent thermal stability up to 175°C. The compact TO-252 (DPAK) surface-mount package makes it ideal for space-constrained industrial and telecom power applications.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 10 A
Forward Voltage (VF): 1.27 V
Surge Current (IFSM): 86 A
Total Charge (Qc): 25 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-252 (DPAK)

Applications

Power factor correction (PFC) circuits
AC-DC power supplies
DC-DC converters
Industrial SMPS
LED drivers
Telecom power systems

Features

Zero reverse recovery current
Low forward voltage drop
High surge current capability
High-frequency switching support
Compact surface-mount design
High-temperature operation up to 175°C