DCD08D65G4 SiC Schottky Diode 650V 8A TO-252 | G4 Single
WXDH
The DCD08D65G4 is a 650V, 8A Silicon Carbide (SiC) Schottky barrier diode designed for high-efficiency power conversion applications. Built using advanced G4 SiC technology, it delivers zero reverse recovery current, low forward voltage drop, and reliable operation at junction temperatures up to 175°C. The compact TO-252 (DPAK) surface-mount package makes it ideal for space-saving, high-frequency switching designs.
Key Specifications
Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 8 A
Forward Voltage (VF): 1.27 V
Surge Current (IFSM): 72 A
Total Charge (Qc): 21 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-252 (DPAK)
Applications
Power factor correction (PFC) circuits
AC-DC power supplies
DC-DC converters
Industrial SMPS
LED drivers
Telecom power systems
Features
Zero reverse recovery current
Low forward voltage drop
High surge current capability
High-frequency switching performance
Compact surface-mount package
High-temperature operation up to 175°C
