DCD06D65G4 SiC Schottky Diode 650V 6A TO-252 | G4 Single

The DCD06D65G4 is a 650V, 6A Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion systems. Built using advanced G4 SiC technology, it offers zero reverse recovery current, low forward voltage drop, and excellent thermal performance up to 175°C. Packaged in a compact TO-252 (DPAK) surface-mount configuration, it is ideal for high-frequency and space-constrained applications requiring improved efficiency and reliability.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 6 A
Forward Voltage (VF): 1.27 V
Surge Current (IFSM): 52 A
Total Charge (Qc): 17 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-252 (DPAK)

Applications

Power factor correction (PFC) circuits
AC-DC power supplies
DC-DC converters
Industrial SMPS
LED drivers
Telecom power systems

Features

Zero reverse recovery losses
Low forward voltage drop
High surge current capability
High-frequency switching support
Compact surface-mount package
High-temperature operation up to 175°C