DCD05D120G4 SiC Schottky Diode 1200V 5A TO-252 | G4 Single

The DCD05D120G4 is a 1200V, 5A Silicon Carbide (SiC) Schottky barrier diode designed for high-voltage, high-efficiency power conversion systems. Utilizing advanced G4 SiC technology, it provides zero reverse recovery current, low switching losses, and stable operation at junction temperatures up to 175°C. The compact TO-252 (DPAK) surface-mount package makes it suitable for space-constrained industrial and renewable energy applications.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 5 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 50 A
Total Charge (Qc): 25 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-252 (DPAK)

Applications

High-voltage PFC circuits
Industrial AC-DC power supplies
DC-DC converters
Solar inverters
Battery charging systems
Telecom power units

Features

Zero reverse recovery current
Low conduction and switching losses
High blocking capability (1200V)
Compact surface-mount package
High-temperature operation up to 175°C
Improved system efficiency