DCD04D65G4 SiC Schottky Diode 650V 4A TO-252 | G4 High-Efficiency Rectifier

The DCD04D65G4 is a 650V, 4A Silicon Carbide (SiC) Schottky barrier diode designed for high-efficiency power conversion applications. Built on advanced G4 SiC technology, this device delivers ultra-low reverse recovery characteristics, low forward voltage drop, and excellent thermal performance up to 175°C. Housed in a compact TO-252 (DPAK) surface-mount package, it is ideal for space-constrained, high-frequency switching designs requiring superior efficiency and reliability.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 4 A
Forward Voltage (VF): 1.28 V
Surge Current (IFSM): 32 A
Total Charge (Qc): 11.5 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-252 (DPAK)

Applications

Power factor correction (PFC)
AC-DC power supplies
DC-DC converters
Solar inverters
Industrial SMPS
LED drivers

Features

Zero reverse recovery current
Low forward voltage drop
High surge current capability
High-temperature operation up to 175°C
Compact surface-mount package
Improved system efficiency