DCCT50D65G4 SiC Schottky Diode 650V 50A TO-247-2 | G4 Single
WXDH
The DCCT50D65G4 is a 650V, 50A Silicon Carbide Schottky barrier diode optimized for high-power industrial and renewable energy applications. Built on advanced G4 SiC technology, it provides ultra-fast switching performance, negligible reverse recovery losses, and low conduction losses. The TO-247-2 package ensures excellent thermal dissipation for continuous high-current operation.
Key Specifications
Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 50 A
Forward Voltage (VF): 1.3 V
Surge Current (IFSM): 300 A
Total Charge (Qc): 110 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-247-2
Applications
High-current PFC systems
Industrial power converters
Solar inverters
Motor drives
EV charging systems
High-power SMPS
Features
Zero reverse recovery current
Low switching and conduction losses
High surge capability (300A)
Excellent thermal management
High efficiency in high-frequency applications
Robust TO-247 package for high-power designs
