DCCT50D170G3 SiC Schottky Diode 1700V 50A TO-247-2 | G3 Single
WXDH
The DCCT50D170G3 is a 1700V, 50A Silicon Carbide (SiC) Schottky barrier diode engineered for ultra-high-voltage and high-current power conversion systems. Built on advanced G3 SiC technology, it provides zero reverse recovery current, low switching losses, and stable operation up to 175°C junction temperature. The TO-247-2 package ensures superior thermal performance, making it ideal for demanding industrial, renewable energy, and grid infrastructure applications.
Key Specifications
Device Type: SiC Schottky Diode
Technology: G3
Voltage Rating (VBR): 1700 V
Forward Current (IF): 50 A
Forward Voltage (VF): 1.6 V
Surge Current (IFSM): 300 A
Total Charge (Qc): 509 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-247-2
Applications
High-voltage PFC systems
Industrial power converters
Solar and wind energy inverters
Medium-voltage motor drives
EV fast-charging infrastructure
Grid-connected power systems
Features
Zero reverse recovery current
Ultra-high blocking voltage (1700V)
High continuous current capability (50A)
High surge current rating (300A)
Low switching losses
Excellent thermal dissipation in TO-247 package
Reliable high-temperature operation up to 175°C
