DCCT40D120G4 SiC Schottky Diode 1200V 40A TO-247-2 | G4 Single
WXDH
The DCCT40D120G4 is a 1200V, 40A Silicon Carbide Schottky barrier diode optimized for high-power industrial and renewable energy systems. Based on advanced G4 SiC technology, it delivers zero reverse recovery current, low conduction losses, and reliable high-temperature operation up to 175°C. The TO-247-2 package ensures strong thermal performance for continuous high-current applications.
Key Specifications
Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 40 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 300 A
Total Charge (Qc): 154 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-247-2
Applications
High-power PFC circuits
Industrial power converters
Solar inverters
Motor drive systems
EV charging systems
High-current rectification stages
Features
Zero reverse recovery losses
Low switching and conduction losses
High surge capability (300A)
High blocking voltage (1200V)
Excellent thermal dissipation
Robust TO-247 package for high-power design
