DCCT30D65G4 SiC Schottky Diode 650V 30A TO-247-2 | G4 Single
WXDH
The DCCT30D65G4 is a 650V, 30A Silicon Carbide Schottky barrier diode optimized for high-current industrial and renewable energy systems. Based on G4 SiC technology, it provides ultra-fast switching performance, zero reverse recovery current, and low conduction losses. The TO-247-2 package ensures strong thermal dissipation for continuous high-power operation.
Key Specifications
Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 30 A
Forward Voltage (VF): 1.3 V
Surge Current (IFSM): 220 A
Total Charge (Qc): 68 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-247-2
Applications
High-current PFC systems
Industrial power converters
Solar inverters
Motor drive systems
EV charging infrastructure
High-power SMPS
Features
Zero reverse recovery current
Low switching losses
High surge capability (220A)
Excellent thermal management
High efficiency at high switching frequencies
Robust TO-247 package for high-power design
