DCCT30D120G4 SiC Schottky Diode 1200V 30A TO-247-2 | G4 Single
WXDH
The DCCT30D120G4 is a 1200V, 30A Silicon Carbide (SiC) Schottky barrier diode designed for high-voltage, high-current power conversion systems. Built using advanced G4 SiC technology, it delivers zero reverse recovery current, low switching losses, and stable high-temperature operation up to 175°C. The TO-247-2 package ensures excellent thermal dissipation for demanding industrial and renewable energy applications.
Key Specifications
Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 30 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 240 A
Total Charge (Qc): 78 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-247-2
Applications
High-voltage PFC systems
Industrial power converters
Solar inverter rectification
Motor drives
EV charging infrastructure
High-power SMPS
Features
Zero reverse recovery current
Low conduction and switching losses
High surge capability (240A)
High blocking voltage (1200V)
Excellent thermal management
Optimized for high-power applications
